A low leakage current Tunneling-FET based on SOI

In this paper, we present a new structure of Tunneling-FET(TFET) based on SOI to reduce the leakage current. A thin oxide is inserted in the interface of Drain and Bulk near the gate-oxide side. The thin oxide eliminated the tunneling current between Drain and Bulk completely. This new TFET shows a superior performance with lower leakage current (1.1e-14 A/um) and larger ION/IOFF ratio $( 3 \times 10^{8})$.