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Characterization of a Silicon Carbide BCD Process for 300°C Circuits

Authors :
Pengyu Lai
Arman Ur Rashid
Robert Murphree
Affan Abbasi
Zhong Chen
Maksudal Hossain
Alan Mantooth
Sajib Roy
Tobias Erlbacher
John R. Fraley
Source :
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

This paper describes a silicon carbide (SiC) Bipolar-CMOS-DMOS (BCD) process technology and presents the corresponding characterization results. The process enables the design of integrated circuits (ICs) capable of high temperature operation and heterogeneous integration into SiC power modules. The paper showcases the cross-section of the triple-well, single metal layer SiC BCD process and details the key process challenges. Characterization results for NMOS, PMOS, LDMOS, and BJT structures are presented. DC output characteristics of the standard 1.5 μm NMOS and PMOS are shown for temperatures of 25°C and 300°C. The drain-to-source breakdown voltages observed for the LDMOS (at 1 nA leakage) is 178 V at 25°C. The integrated passives available in the process include N-diffusion resistors with a sheet resistance of approximately 1.2 kΩ/□ and poly-to-N-diffusion capacitors with 0.612 fF/μm2 capacitance.

Details

Database :
OpenAIRE
Journal :
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Accession number :
edsair.doi...........dc88b1e5c5494dbcf54d8b3b47380166
Full Text :
https://doi.org/10.1109/wipda46397.2019.8998920