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Characterization of a Silicon Carbide BCD Process for 300°C Circuits
- Source :
- 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- This paper describes a silicon carbide (SiC) Bipolar-CMOS-DMOS (BCD) process technology and presents the corresponding characterization results. The process enables the design of integrated circuits (ICs) capable of high temperature operation and heterogeneous integration into SiC power modules. The paper showcases the cross-section of the triple-well, single metal layer SiC BCD process and details the key process challenges. Characterization results for NMOS, PMOS, LDMOS, and BJT structures are presented. DC output characteristics of the standard 1.5 μm NMOS and PMOS are shown for temperatures of 25°C and 300°C. The drain-to-source breakdown voltages observed for the LDMOS (at 1 nA leakage) is 178 V at 25°C. The integrated passives available in the process include N-diffusion resistors with a sheet resistance of approximately 1.2 kΩ/□ and poly-to-N-diffusion capacitors with 0.612 fF/μm2 capacitance.
- Subjects :
- 010302 applied physics
LDMOS
Materials science
business.industry
020208 electrical & electronic engineering
02 engineering and technology
Integrated circuit
01 natural sciences
law.invention
PMOS logic
chemistry.chemical_compound
Capacitor
CMOS
chemistry
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Silicon carbide
Optoelectronics
Resistor
business
NMOS logic
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
- Accession number :
- edsair.doi...........dc88b1e5c5494dbcf54d8b3b47380166
- Full Text :
- https://doi.org/10.1109/wipda46397.2019.8998920