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Global-Gate Controlled One-Transistor One-Digital-Memristor Structure for Low-Bit Neural Network

Authors :
Gaokuo Zhong
Wei Zhang
Beng Kang Tay
Guangchao Zhao
Philippe Coquet
Jiangyu Li
Mingqiang Huang
Xingli Wang
Source :
IEEE Electron Device Letters. 42:106-109
Publication Year :
2021
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2021.

Abstract

Memristor based neuromorphic computing system has recently attracted enormous attention due to its fast and energy-efficient matrix vector multiplication, thus providing a novel approach to implement neural networks for artificial intelligence. However, the widely studied analogue memristors exhibit major flaws in terms of high conductance variation and nonlinear/asymmetric characteristics. In this work, we develop global gate controlled one transistor one digital memristor (1T1DM) architecture as the basic binary electronic synapse. Inspired by the current research highlights about low-bit networks, we further implement low-bit neuromorphic computing onto our 1T1DM systems by simulation. Compared to the classical analogue type of memristor with one transistor one analogue memristor (1T1R) structure, our 1T1DM network is light-weighted, highly robust and can work well on challenging visual tasks. Besides, benefiting from the global gated device structure, the on-state conductance of the digital memristors in the network can be simultaneously modulated by the controlling gate, offering possibility to tune the power consumption and operation speed while will not increase the circuit complexity.

Details

ISSN :
15580563 and 07413106
Volume :
42
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........dce9eb583bc499f19a86416fd0cc1c93
Full Text :
https://doi.org/10.1109/led.2020.3037203