Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition

MLA

Min-Kai Lee, et al. “Enhancement of Growth Rate Due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metal‐organic Chemical Vapor Deposition.” Journal of Applied Physics, vol. 54, Sept. 1983, pp. 5464–65. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dd137b29c98d810277a74aef0a4876c8&authtype=sso&custid=ns315887.

APA

Min-Kai Lee, Wei-Chou Hsu, Yan-Kuin Su, & Chun-Yen Chang. (1983). Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition. Journal of Applied Physics, 54, 5464–5465.

Chicago

Min-Kai Lee, Wei-Chou Hsu, Yan-Kuin Su, and Chun-Yen Chang. 1983. “Enhancement of Growth Rate Due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metal‐organic Chemical Vapor Deposition.” Journal of Applied Physics 54 (September): 5464–65. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dd137b29c98d810277a74aef0a4876c8&authtype=sso&custid=ns315887.