Growth of aluminum on Si using dimethyl-ethyl amine alane

The paper describes growth of aluminum on a hydrogen terminated Si (100) surface using dimethyl-ethyl amine alane. The growth rate depends on the substrate temperature with an activation energy of 0.56 eV at the temperature ranging from 150 to 250°C. Selective growth of Al into 1.5-μm diameter via-holes is successfully demonstrated at the substrate temperature of 150°C. In situ FTIR measurements suggest that growth of Al occurs by the chemical reaction between AlH 3 and a hydrogen terminated Si surface.