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Structural characterization of InGaN thin films and multiple quantum wells: an approach of combining various X-ray scattering methods
- Source :
- Physica B: Condensed Matter. 336:109-117
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- We have evaluated the structural and chemical properties of InGaN films and InGaN/GaN multiple quantum wells (MQWs) using various X-ray scattering methods such as high-Q diffraction, anomalous X-ray scattering reciprocal space mapping, and grazing incidence X-ray scattering. The strain and the indium composition of InGaN films are determined from the reciprocal space maps near the (1 0 1 3) and by anomalous X-ray scattering spectra obtained near the In K absorption edge at the InGaN (0 0 0 6) Bragg peak. Combining the anomalous X-ray scattering spectra and regular X-ray diffraction pattern, the Poisson’s ratio of InGaN is determined to be ν≈0.23. The structure of MQWs is also investigated at high-Q ranges including the (0 0 0 6) and the (0 0 0 8) Bragg peaks where InGaN Bragg reflections are well resolved from the GaN reflections.
- Subjects :
- Diffraction
Materials science
Anomalous scattering
business.industry
Scattering
chemistry.chemical_element
Bragg peak
Condensed Matter Physics
Molecular physics
Electronic, Optical and Magnetic Materials
Reciprocal lattice
Optics
Absorption edge
chemistry
Electrical and Electronic Engineering
Thin film
business
Indium
Subjects
Details
- ISSN :
- 09214526
- Volume :
- 336
- Database :
- OpenAIRE
- Journal :
- Physica B: Condensed Matter
- Accession number :
- edsair.doi...........dd781e160a6a470c551ed44dc4d3b480