Blue shift of multiple quantum wells induced by n-InP/p-InP/MQW structure

A novel disordering technique of multiple quantum wells (MQWs) is realized by a layer structure consisted of n-InP/p-InP/GaInAsP MQW (/spl lambda/g=1.5 /spl mu/m) grown by MOCVD. The emission wavelength of the MQW shifts to the shorter side under the existence of a n-InP cap layer. The energy shift becomes larger with increase of growth temperature and thickness of the n-InP cap, and reaches as large as 130 meV (1500 nm->1300 nm) at 650/spl deg/C and 3000 nm, respectively. From the depth profile measured by secondary ion mass spectroscopy, interdiffusion of group V elements (As and P) between well and barrier is the origin of the blue shift.