Photoconductivity and photoluminescence of a-Si:H at low temperature

We have studied the temperature dependence of the photoluminescence steady state and transient photoconductivity of a-Si:H down to 4 K. Below 50 K we observe photoconductivity with ημτ ⋍ 10 −11 cm 2 / V , which is independent of temperature and varies only little with the defect density in the films. We propose that this conduction arises predominantly from the drift of the photoexcited electrons and holes during thermalization in the extended states prior to the localization in states below the mobility edge. An important implication of the present data is that, even at helium temperatures, a considerable part of the carriers recombines in a non-geminate process.