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IIA-10 submicron-length tungsten gate self-aligned GaAs MESFET (late paper)

Authors :
M. Yamazaki
K. Matsumoto
T. Kurosu
N. Atoda
M. Iida
N. Hashizume
T. Endo
K. Nishimura
Kazutaka Tomizawa
Source :
IEEE Transactions on Electron Devices. 29:1666-1666
Publication Year :
1982
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1982.

Subjects

Subjects :
Materials science
chemistry
business.industry
Electronic engineering
chemistry.chemical_element
Optoelectronics
MESFET
Electrical and Electronic Engineering
Tungsten
business
Electronic, Optical and Magnetic Materials

Details

ISSN :
00189383
Volume :
29
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........ddf10bdb98f02cc73e64dd1e9a328ac1

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