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Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
- Source :
- Nature Materials. 17:103-103
- Publication Year :
- 2017
- Publisher :
- Springer Science and Business Media LLC, 2017.
-
Abstract
- Nature Materials 16, 1216–1224 (2017); published online 23 October 2017; corrected after print 4 December 2017. In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig.
- Subjects :
- Computer science
business.industry
Mechanical Engineering
Published Erratum
02 engineering and technology
General Chemistry
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
computer.software_genre
01 natural sciences
0104 chemical sciences
Resistive random-access memory
Mechanics of Materials
General Materials Science
Artificial intelligence
0210 nano-technology
business
computer
Sentence
Natural language processing
Subjects
Details
- ISSN :
- 14764660 and 14761122
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Nature Materials
- Accession number :
- edsair.doi...........de1de14fba4ab7d698028bce8cd7903e
- Full Text :
- https://doi.org/10.1038/nmat5059