Characterizations of Al 2 O 3 gate dielectric deposited on n‐GaN by plasma‐assisted atomic layer deposition

MLA

Yukiharu Uraoka, et al. “Characterizations of Al 2 O 3 Gate Dielectric Deposited on N‐GaN by Plasma‐assisted Atomic Layer Deposition.” Physica Status Solidi C, vol. 10, Sept. 2013, pp. 1426–29. EBSCOhost, https://doi.org/10.1002/pssc.201300273.

APA

Yukiharu Uraoka, Yasuaki Ishikawa, Koji Yoshitsugu, & Masahiro Horita. (2013). Characterizations of Al 2 O 3 gate dielectric deposited on n‐GaN by plasma‐assisted atomic layer deposition. Physica Status Solidi C, 10, 1426–1429. https://doi.org/10.1002/pssc.201300273

Chicago

Yukiharu Uraoka, Yasuaki Ishikawa, Koji Yoshitsugu, and Masahiro Horita. 2013. “Characterizations of Al 2 O 3 Gate Dielectric Deposited on N‐GaN by Plasma‐assisted Atomic Layer Deposition.” Physica Status Solidi C 10 (September): 1426–29. doi:10.1002/pssc.201300273.