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Photosensitive GeSi/TiO2 multilayers in VIS-NIR
- Source :
- 2017 International Semiconductor Conference (CAS).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- The electrical and photosensing properties correlated with structure and morphology of TiO 2 /(GeSi/TiO 2 ) 2 multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The photosensing properties are studied by measuring photocurrent spectra at different temperatures. We obtain multilayers with 10â15 nm Ge 0.6 Si 0.4 nanocrystals (NCs) by annealing at 800 oC. We evidence the tunneling mechanism between neighbor NCs (Tâ1/2 law) in the dark current-temperature dependence. The photocurrent spectrum has a maximum with position shifting from 940 to 980 nm when the measurement temperature increases from 150 to 300 K, being due to the GeSi NCs.
- Subjects :
- Photocurrent
Materials science
Silicon
Annealing (metallurgy)
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Sputter deposition
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
symbols.namesake
chemistry
Nanocrystal
Transmission electron microscopy
symbols
0210 nano-technology
Raman spectroscopy
Dark current
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 International Semiconductor Conference (CAS)
- Accession number :
- edsair.doi...........decf3a78f441eae6e5bd1d023badb7f9