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pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Source :
- Japanese Journal of Applied Physics. 28:L538
- Publication Year :
- 1989
- Publisher :
- IOP Publishing, 1989.
-
Abstract
- A pnp-type GaAs inversion-base bipolar transistor was fabricated for the first time. The common emitter current gain obtained was β=1010 at 77 K. By measuring the FET mode operation of the GaAs IBT, it was confirmed that the two-dimensional electron gas really worked as a base of the transistor.
- Subjects :
- Power gain
Materials science
Heterostructure-emitter bipolar transistor
business.industry
Heterojunction bipolar transistor
Bipolar junction transistor
Transistor
General Engineering
General Physics and Astronomy
High-electron-mobility transistor
law.invention
law
Optoelectronics
Field-effect transistor
business
Common emitter
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........defb6dc1ba9ae37a50a76bd5e74bddd3
- Full Text :
- https://doi.org/10.1143/jjap.28.l538