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Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode

Authors :
Chowdam Venkata Prasad
Joon Hui Park
Ji Young Min
Wonjin Song
Madani Labed
Yusup Jung
Sinsu Kyoung
Sangmo Kim
Nouredine Sengouga
You Seung Rim
Source :
Materials Today Physics. 30:100932
Publication Year :
2023
Publisher :
Elsevier BV, 2023.

Details

ISSN :
25425293
Volume :
30
Database :
OpenAIRE
Journal :
Materials Today Physics
Accession number :
edsair.doi...........e04f3db22e92e77947fbcc0b2e2bbd34