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Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
- Source :
- Materials Today Physics. 30:100932
- Publication Year :
- 2023
- Publisher :
- Elsevier BV, 2023.
Details
- ISSN :
- 25425293
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Materials Today Physics
- Accession number :
- edsair.doi...........e04f3db22e92e77947fbcc0b2e2bbd34