Study of the programming sequence induced back-pattern effect in split-page 3D vertical-gate (VG) NAND flash

MLA

Kuo-Pin Chang, et al. “Study of the Programming Sequence Induced Back-Pattern Effect in Split-Page 3D Vertical-Gate (VG) NAND Flash.” Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 2014. EBSCOhost, https://doi.org/10.1109/vlsi-tsa.2014.6839661.

APA

Kuo-Pin Chang, Chih-Yuan Lu, Wei-Chen Chen, Yen-Hao Shih, Hang-Ting Lue, Yi-Hsuan Hsiao, & Chih-Chang Hsieh. (2014). Study of the programming sequence induced back-pattern effect in split-page 3D vertical-gate (VG) NAND flash. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). https://doi.org/10.1109/vlsi-tsa.2014.6839661

Chicago

Kuo-Pin Chang, Chih-Yuan Lu, Wei-Chen Chen, Yen-Hao Shih, Hang-Ting Lue, Yi-Hsuan Hsiao, and Chih-Chang Hsieh. 2014. “Study of the Programming Sequence Induced Back-Pattern Effect in Split-Page 3D Vertical-Gate (VG) NAND Flash.” Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), April. doi:10.1109/vlsi-tsa.2014.6839661.