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Influence of the Current on Electron Tunnelling into a Thin Superconducting Film
- Source :
- Journal of the Physical Society of Japan. 24:476-479
- Publication Year :
- 1968
- Publisher :
- Physical Society of Japan, 1968.
-
Abstract
- An anomaly has been found in the current-voltage characteristics of the electron tunnelling in a cross type Sn-SnOx-Pb junction with a small tunnelling resistance and a very thin tin film, which was proved to correspond to the superconducting-to-normal transition in the tin film. Some properties of the anomaly were also examined. It is pointed out that as the electron tunnelling method requires relatively large current through the junction with a small tunnel resistance in order to measure the energy gap directly, the superconducting state of a very thin film is disturbed by this tunnel current.
- Subjects :
- Physics
Superconductivity
Condensed matter physics
Band gap
General Physics and Astronomy
chemistry.chemical_element
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Tunnel effect
chemistry
Condensed Matter::Superconductivity
Thin film
Quantum tunnelling composite
Tin
Quantum tunnelling
Subjects
Details
- ISSN :
- 13474073 and 00319015
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Journal of the Physical Society of Japan
- Accession number :
- edsair.doi...........e0700506b42ad5561668c1b128199e43
- Full Text :
- https://doi.org/10.1143/jpsj.24.476