Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique

MLA

Toshifumi Irisawa, et al. “Tensile Strain Ultra Thin Body SiGe on Insulator through Hetero-Layer Transfer Technique.” Materials Science in Semiconductor Processing, vol. 70, Nov. 2017, pp. 123–26. EBSCOhost, https://doi.org/10.1016/j.mssp.2016.10.010.

APA

Toshifumi Irisawa, Wen Hsin Chang, Hiroyuki Ishii, Noriyuki Uchida, Tatsuro Maeda, & Hiroyuki Hattori. (2017). Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique. Materials Science in Semiconductor Processing, 70, 123–126. https://doi.org/10.1016/j.mssp.2016.10.010

Chicago

Toshifumi Irisawa, Wen Hsin Chang, Hiroyuki Ishii, Noriyuki Uchida, Tatsuro Maeda, and Hiroyuki Hattori. 2017. “Tensile Strain Ultra Thin Body SiGe on Insulator through Hetero-Layer Transfer Technique.” Materials Science in Semiconductor Processing 70 (November): 123–26. doi:10.1016/j.mssp.2016.10.010.