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GaN Schottky barrier diodes for microwave power transmission

Authors :
Xiao Wang
Wei Zhao
Taofei Pu
Xiaobo Li
Yuyu Bu
Jin-Ping Ao
Zhitao Chen
Source :
2018 IEEE MTT-S International Wireless Symposium (IWS).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

In this presentation, GaN Schottky barrier diodes (SBDs) with low access sheet resistance of 25 Ω/□ is fabricated for microwave power transmission. Turn-on voltage of about 0.43 V and ON resistance of 3.15 are achieved by introducing TiN Schottky electrode and low sheet resistance on the access layer. Breakdown voltage of 30 V and off capacitance of 7 pF are also obtained, indicating that the diode is suitable for the application in the microwave power transmission system.

Details

Database :
OpenAIRE
Journal :
2018 IEEE MTT-S International Wireless Symposium (IWS)
Accession number :
edsair.doi...........e127dd0c2a423a9f2a0325ef4931b8a2