GaN Schottky barrier diodes for microwave power transmission

In this presentation, GaN Schottky barrier diodes (SBDs) with low access sheet resistance of 25 Ω/□ is fabricated for microwave power transmission. Turn-on voltage of about 0.43 V and ON resistance of 3.15 are achieved by introducing TiN Schottky electrode and low sheet resistance on the access layer. Breakdown voltage of 30 V and off capacitance of 7 pF are also obtained, indicating that the diode is suitable for the application in the microwave power transmission system.