SOI Instrumentation Amplifier for High-Temperature Applications

The article presents the results of the development and measurements of a specialized integrated circuit of an instrumentation amplifier (IA) with indirect negative current feedback. The schematic and the measurement results of the main characteristics for a silicon-on-insulator metal-oxide-semiconductor instrumentation amplifier are presented. The amplifier is intended for use as a part of a sensor network for monitoring the state of high-temperature objects. The temperature range of the instrumentation amplifier is up to 200 °C. Instrumentation amplifier has 11.8 MHz gain bandwidth product with a 3.3 V supply voltage. The measured gain is 27.50 dB and the error in setting the gain was 0.27 dB, the 3 dB bandwidth is 500 kHz.