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Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C
- Source :
- Ceramics International. 48:12806-12812
- Publication Year :
- 2022
- Publisher :
- Elsevier BV, 2022.
Details
- ISSN :
- 02728842
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Ceramics International
- Accession number :
- edsair.doi...........e3adbb1cbe40318f918f65bf3eb4e34f