Experiment and Prediction on Thermal Conductivity of Al2O3/ZnO Nano Thin Film Interface Structure

We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness is > 300 nm; however, TC of Al2O3/ZnO nano thin interface is higher than that of relevant single nano thin interface when the thin films thickness is < 10 nm. This prediction may build a basis for the understanding of interface between two different oxide materials. It implies an idea for new generation of semiconductor devices manufacturing.