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Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants
- Source :
- IEEE Transactions on Electron Devices. 69:3087-3093
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........e4796a3f66516a56cc2b4d914dce8ab3