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Shallow donor states of Ag impurity in ZnSe single crystals
- Source :
- Semiconductor Science and Technology. 21:654-660
- Publication Year :
- 2006
- Publisher :
- IOP Publishing, 2006.
-
Abstract
- The Hall coefficient, electrical conductivity and electron mobility are investigated in Ag-doped n-ZnSe single crystals at temperatures between 8 and 500 K immediately after doping the samples and after storing them for 5 years under normal room conditions in darkness. The formation of donor-type Agi interstitial defects stimulated by time is found for the first time. After 5 years storage, the samples show a dramatic increase in the electrical conductivity, free electron concentration and concentration of shallow donors. A model that explains these changes by the displacement of Ag ions into interstitial sites due to lattice deformation forces is proposed. The formation of an Ag-donor impurity band in n-ZnSe:Zn:Ag crystals stored at room temperature is also studied.
- Subjects :
- Free electron model
Electron mobility
Condensed matter physics
Chemistry
Doping
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Electrical resistivity and conductivity
Impurity
Hall effect
Interstitial defect
Materials Chemistry
Electrical and Electronic Engineering
Shallow donor
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 21
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........e4dc9df5b9961dae7c41c2e5b1524dbd