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Effects of SiO2 passivation on the sheet carrier density of two-dimensional electron gas formed in the AlGaN/GaN interface

Authors :
Jaeho Kim
Jongseob Kim
Jaehee Cho
Jae-joon Oh
Source :
Japanese Journal of Applied Physics. 59:101001
Publication Year :
2020
Publisher :
IOP Publishing, 2020.

Subjects

Subjects :
Charge-carrier density
Materials science
Physics and Astronomy (miscellaneous)
Passivation
Strain (chemistry)
business.industry
Interface (computing)
General Engineering
General Physics and Astronomy
Optoelectronics
Algan gan
High-electron-mobility transistor
business

Details

ISSN :
13474065 and 00214922
Volume :
59
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........e57fd4d53cbcb76b2ea5f613df87460c

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