Polarized Memory Effect Observed on Se-SnO2 System

The polarized memory effect (the memory in which switching between ON and OFF states depends on the polarity of the bias voltage) on the Se-SnO2 system is described. This effect is observed on the samples with Se films 300∼5000 Å in thickness. The ratio of the resistance of OFF state R O F F to that of ON state R O N is about three orders of magnitude. In the case of the film with thickness 103 Å, the threshold voltage from OFF to ON states V t h is 15 V, and the reverse voltage from ON to OFF states V r is 3.5 V.