Gate Voltage Dependence of the Resistance of a Two-Dimensional Array of Small Tunnel Junctions

Authors :: Hideto Kazawa
Shun-ichi Kobayashi
Youiti Ootuka
Ryuta Yagi
Keiji Ono
Source :: Japanese Journal of Applied Physics. 36:4020
Publication Year :: 1997
Publisher :: IOP Publishing, 1997.
Abstract: We studied the gate voltage dependence of the resistance of a two-dimensional array of Al/AlOx/Al small tunnel junctions. The resistance exhibited periodic oscillations similar to those in a single electron transistor in both superconducting and normal states. The amplitude of the oscillation in the superconducting state was much smaller than that in the normal state.

Subjects :: Superconductivity
Condensed matter physics
Oscillation
General Engineering
General Physics and Astronomy
Coulomb blockade
chemistry.chemical_element
Binary compound
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gate voltage
chemistry.chemical_compound
Amplitude
chemistry
Aluminium
Tunnel junction
Condensed Matter::Superconductivity

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