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Band offset and electron affinity of MBE-grown SnSe2

Authors :
David J. Gundlach
Kyle Shen
N. V. Nguyen
Suresh Vishwanath
Jacek K. Furdyna
Qin Zhang
Huili Grace Xing
Huai-Hsun Lien
Guangjun Cheng
Malgorzata Dobrowolska
Mingda Oscar Li
Rusen Yan
Edward Lochocki
Angela R. Hight Walker
Xinyu Liu
Source :
Applied Physics Letters. 112:042108
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

SnSe2 is currently considered a potential two-dimensional material that can form a near-broken gap heterojunction in a tunnel field-effect transistor due to its large electron affinity which is experimentally confirmed in this letter. With the results from internal photoemission and angle-resolved photoemission spectroscopy performed on Al/Al2O3/SnSe2/GaAs and SnSe2/GaAs test structures where SnSe2 is grown on GaAs by molecular beam epitaxy, we ascertain a (5.2 ± 0.1) eV electron affinity of SnSe2. The band offset from the SnSe2 Fermi level to the Al2O3 conduction band minimum is found to be (3.3 ± 0.05) eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. It is concluded that the electron affinity of SnSe2 is larger than that of most semiconductors and can be combined with other appropriate semiconductors to form near broken-gap heterojunctions for the tunnel field-effect transistor that can potentially achieve high on-currents.

Details

ISSN :
10773118 and 00036951
Volume :
112
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........e8ab660650edf3b74fa65705838a1fef
Full Text :
https://doi.org/10.1063/1.5016183