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High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy
- Source :
- Applied Physics Letters. 89:041907
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- InN/In0.75Ga0.25N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements show ...
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 89
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........e8f338d3e07de40c52158708336c0bb5
- Full Text :
- https://doi.org/10.1063/1.2221869