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High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy

Authors :
Petter Holmström
Katsumi Kishino
Akihiko Kikuchi
Tatsuo Ohashi
Source :
Applied Physics Letters. 89:041907
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

InN/In0.75Ga0.25N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements show ...

Details

ISSN :
10773118 and 00036951
Volume :
89
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........e8f338d3e07de40c52158708336c0bb5
Full Text :
https://doi.org/10.1063/1.2221869