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Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod
- Source :
- Journal of Zhejiang University Science A. 17:37-44
- Publication Year :
- 2016
- Publisher :
- Zhejiang University Press, 2016.
-
Abstract
- We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.
- Subjects :
- 010302 applied physics
Materials science
genetic structures
Condensed matter physics
business.industry
General Engineering
02 engineering and technology
Electron
021001 nanoscience & nanotechnology
01 natural sciences
Piezoelectricity
Displacement (vector)
Stress (mechanics)
Condensed Matter::Materials Science
Semiconductor
Electric field
0103 physical sciences
Optoelectronics
Electric potential
0210 nano-technology
business
Electric displacement field
Subjects
Details
- ISSN :
- 18621775 and 1673565X
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Journal of Zhejiang University Science A
- Accession number :
- edsair.doi...........e8fbe64a7eeadbd53fd66b2f35670e31