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Structural, electrical, and thermoelectric properties of CrSi 2 thin films
- Source :
- Thin Solid Films. 545:100-105
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- Chromium silicide (CrSi 2 ) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates. These films were characterized after deposition and then after 300–600 °C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy. The Seebeck coefficient and electrical resistivity were measured. The compositions of the sputtered films were found to be close to the sputtering target stoichiometry. The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films. The 0.1 μm p-type films annealed in an argon atmosphere at 400 °C exhibited the largest power factor of 1.0 × 10 − 3 W/(K 2 ·m).
- Subjects :
- Materials science
Annealing (metallurgy)
Metals and Alloys
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrical resistivity and conductivity
Sputtering
Seebeck coefficient
Thermoelectric effect
Materials Chemistry
Composite material
Thin film
Spectroscopy
Stoichiometry
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 545
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........e95d8c9f6280b3a2061acdc3b510c5c6