Back to Search
Start Over
Cerium doped strontium titanate with stable high permittivity and low dielectric loss
- Source :
- Journal of Alloys and Compounds. 772:1105-1112
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- High permittivity materials continue to arouse considerable interest due to their applications in the field of high performance capacitors. However it is still a challenge to make material both with stable high permittivity and low dielectric loss. Here, the Sr1-3x/2CexTiO3 (SCT) ceramics are synthesized via solid-state reaction process and sintering in air. The sample (x = 0.01) exhibits a high permittivity of ∼7000 and low dielectric loss of ∼0.007 at room temperature and 1 kHz. Moreover, the dielectric properties are stable over a very broad temperature and frequency range. Further investigations reveal that the high permittivity is related to the defect chemistry caused by the trace Ce ions doping. The Ti3+ ions substitute the Ti4+ ions lead to the Ti-O octahedral off-center, which make a certain contribution to improve the permittivity. The low dielectric loss is owing to the fact that the defects are more likely to be in the form of defect clusters in the Ce doped SrTiO3 monophase solid solutions. The appropriate defect chemistry design suppresses the dielectric loss relaxation peak of Sr1-xCexTiO3 (x = 0.01) caused by the motion of oxygen vacancies.
- Subjects :
- Permittivity
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Dielectric
010402 general chemistry
01 natural sciences
law.invention
chemistry.chemical_compound
law
Materials Chemistry
Ceramic
Mechanical Engineering
Doping
Metals and Alloys
021001 nanoscience & nanotechnology
0104 chemical sciences
Capacitor
Cerium
chemistry
Mechanics of Materials
visual_art
visual_art.visual_art_medium
Strontium titanate
Dielectric loss
0210 nano-technology
Subjects
Details
- ISSN :
- 09258388
- Volume :
- 772
- Database :
- OpenAIRE
- Journal :
- Journal of Alloys and Compounds
- Accession number :
- edsair.doi...........e9d2c0bc0da98c7cb57779259bacfa25
- Full Text :
- https://doi.org/10.1016/j.jallcom.2018.09.061