Microstructural and Optoelectronic Properties of SiGe:H Films at the Transition Edge Fabricated by PECVD

Subjects

Subjects :

Materials science
business.industry
02 engineering and technology
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Plasma-enhanced chemical vapor deposition
0103 physical sciences
Optoelectronics
General Materials Science
010306 general physics
0210 nano-technology
business
Transition edge

Details

ISSN :

02321300

Volume :

53

Database :

OpenAIRE

Journal :

Crystal Research and Technology

Accession number :

edsair.doi...........ea0a2c13d763e70ace87bb9c409dbaf6

Full Text :

https://doi.org/10.1002/crat.201700141