Cite
Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors
MLA
Yukiharu Uraoka, et al. “Unique Degradation under AC Stress in High-Mobility Amorphous In–W–Zn–O Thin-Film Transistors.” Applied Physics Express, vol. 13, Apr. 2020, p. 054003. EBSCOhost, https://doi.org/10.35848/1882-0786/ab88c5.
APA
Yukiharu Uraoka, Miki Miyanaga, Mami N. Fujii, Yasuaki Ishikawa, Ryoko Miyanaga, & Takanori Takahashi. (2020). Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors. Applied Physics Express, 13, 054003. https://doi.org/10.35848/1882-0786/ab88c5
Chicago
Yukiharu Uraoka, Miki Miyanaga, Mami N. Fujii, Yasuaki Ishikawa, Ryoko Miyanaga, and Takanori Takahashi. 2020. “Unique Degradation under AC Stress in High-Mobility Amorphous In–W–Zn–O Thin-Film Transistors.” Applied Physics Express 13 (April): 054003. doi:10.35848/1882-0786/ab88c5.