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Characteristic and Robustness of Trench Floating Limiting Rings for 4H-SiC Junction Barrier Schottky Rectifiers
- Source :
- IEEE Electron Device Letters. :1-1
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- In this letter, planar floating limiting rings (FLRs) and trench FLRs with different trench depths for the 4H-SiC junction barrier Schottky (JBS) rectifiers are analyzed and compared with simulations and experiments. Compared with the planar FLRs, the experimental results present that the first ring spacing window that termination efficiency exceeds 80% of the parallel plane breakdown voltage (BV) can be widened and termination area can be reduced at the same BV by adopting the trench FLRs. The simulations also indicate that there is an optimal trench depth for the trench FLRs and a smaller sidewall angle can achieve better device performance. Additionally, the repetitive avalanche current stress measurements imply that the trench FLRs has better robustness regarding the BV shift, achieving better device reliability.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Schottky diode
Epitaxy
Electrostatics
01 natural sciences
Electronic, Optical and Magnetic Materials
Planar
Electric field
0103 physical sciences
Trench
Optoelectronics
Breakdown voltage
Electric potential
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........eabade2e42b169b0f5acd7c60eadebf8