Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser

Assuming that the temperature dependence of the threshold current for pulsed operation is known, an analytical expression for the maximum heat-sink temperature, T/sub hm/, for CW operation of the laser can be derived. The maximum heat-sink temperature is expressed in terms of the characteristic temperature T/sub 0/, the room-temperature threshold current for pulsed operation I/sub 0/, the equivalent effective thermal resistance theta , and the equivalent effective series electrical resistance r of the device. It is shown that the values of T/sub hm/ can be enhanced by increasing the value of T/sub 0/ or by decreasing the values of I/sub 0/, theta , and r. >