Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings

MLA

Dan N. Le, et al. “Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings.” ACS Applied Nano Materials, vol. 4, Feb. 2021, pp. 2558–64. EBSCOhost, https://doi.org/10.1021/acsanm.0c03203.

APA

Dan N. Le, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Lance Lee, Yong Chan Jung, Jiyoung Kim, Harrison Sejoon Kim, Akshay Sahota, Arul Vigneswar Ravichandran, Si Joon Kim, Jaebeom Lee, & Su Min Hwang. (2021). Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings. ACS Applied Nano Materials, 4, 2558–2564. https://doi.org/10.1021/acsanm.0c03203

Chicago

Dan N. Le, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Lance Lee, Yong Chan Jung, Jiyoung Kim, et al. 2021. “Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings.” ACS Applied Nano Materials 4 (February): 2558–64. doi:10.1021/acsanm.0c03203.