Photoinitiation effect during photo-induced deposition of aluminum films using dimethylaluminum hydride

Photo-induced deposition of aluminum films on silicon dioxide and on a hydrogen terminated silicon surface was carried out using dimethylaluminum hydride (DMAH) and a deuterium lamp. After an initial nucleation was induced by irradiation, film growth was sustained without irradiation at a substrate temperature of 200°C where no deposition can occur via a thermal reaction alone. In addition, the growth rate decreased under irradiation during the growth period. An ArF laser also induced a similar photoinitiation effect.