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Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors
- Source :
- Applied Physics Letters. 111:202904
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- In this study, radical oxidation is applied to the fabrication of a hybrid self-assembled monolayer (SAM)/hafnium oxide (HfOx) gate dielectric in molybdenum disulfide (MoS2) field-effect transistors. The fabrication process involves radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and the deterministic transfer of MoS2 flakes. A subthreshold slope of 75 mV/dec and small hysteresis were demonstrated, indicating superior interfacial properties. Cross-sectional transmission electron microscopy revealed the uniform formation of the HfOx layer at the surface of HfN. The SAM is indispensable for the superior interfacial properties in MoS2 field-effect transistors. The radical oxidation is not restricted to the oxidation of silicon and germanium substrates and was also found to be applicable to the fabrication of a high-k gate dielectric. This study opens up interesting possibilities of radical oxidation for research on functional electronic devices.
- Subjects :
- Materials science
Fabrication
Physics and Astronomy (miscellaneous)
Silicon
Gate dielectric
Inorganic chemistry
chemistry.chemical_element
Germanium
Self-assembled monolayer
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Subthreshold slope
chemistry.chemical_compound
chemistry
Chemical engineering
0103 physical sciences
Monolayer
010306 general physics
0210 nano-technology
Molybdenum disulfide
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 111
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........ebfbdc30bec4165598dd401786f02f30
- Full Text :
- https://doi.org/10.1063/1.4998313