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Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

Authors :
Tomoaki Oba
Ryo Ikoma
Hiroyuki Takagi
Takamasa Kawanago
Source :
Applied Physics Letters. 111:202904
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

In this study, radical oxidation is applied to the fabrication of a hybrid self-assembled monolayer (SAM)/hafnium oxide (HfOx) gate dielectric in molybdenum disulfide (MoS2) field-effect transistors. The fabrication process involves radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and the deterministic transfer of MoS2 flakes. A subthreshold slope of 75 mV/dec and small hysteresis were demonstrated, indicating superior interfacial properties. Cross-sectional transmission electron microscopy revealed the uniform formation of the HfOx layer at the surface of HfN. The SAM is indispensable for the superior interfacial properties in MoS2 field-effect transistors. The radical oxidation is not restricted to the oxidation of silicon and germanium substrates and was also found to be applicable to the fabrication of a high-k gate dielectric. This study opens up interesting possibilities of radical oxidation for research on functional electronic devices.

Details

ISSN :
10773118 and 00036951
Volume :
111
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........ebfbdc30bec4165598dd401786f02f30
Full Text :
https://doi.org/10.1063/1.4998313