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Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
- Source :
- ACS Applied Electronic Materials. 1:2260-2267
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component. The HOMO–LUMO gap of parylene is large ...
- Subjects :
- 010302 applied physics
Materials science
business.industry
Graphene
Transistor
Parylene C
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Non-volatile memory
chemistry.chemical_compound
Parylene
chemistry
law
0103 physical sciences
Materials Chemistry
Electrochemistry
Optoelectronics
Organic component
Charge injection
0210 nano-technology
business
Subjects
Details
- ISSN :
- 26376113
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........ec20d2e8066019c563495c5ba1f69fe2
- Full Text :
- https://doi.org/10.1021/acsaelm.9b00467