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Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors

Authors :
B. Barut
J.G. Gluschke
Jonathan P. Bird
Michael Randle
N. Arabchigavkani
J. Nathawat
R. Dixit
Keke He
Adam P. Micolich
C.-P. Kwan
S. Yin
Source :
ACS Applied Electronic Materials. 1:2260-2267
Publication Year :
2019
Publisher :
American Chemical Society (ACS), 2019.

Abstract

We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component. The HOMO–LUMO gap of parylene is large ...

Details

ISSN :
26376113
Volume :
1
Database :
OpenAIRE
Journal :
ACS Applied Electronic Materials
Accession number :
edsair.doi...........ec20d2e8066019c563495c5ba1f69fe2
Full Text :
https://doi.org/10.1021/acsaelm.9b00467