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Optical properties of CdS0.2Se0.8:V

Authors :
Jonathan T. Goldstein
K.-T. Chen
Steven H. Morgan
Ying-Fang Chen
M. C. Ohmer
Arnold Burger
S. M. Hegde
Ravindra Pandey
Source :
Journal of Electronic Materials. 32:783-788
Publication Year :
2003
Publisher :
Springer Science and Business Media LLC, 2003.

Abstract

We report here a comparison between two methods for calculating the index of refraction of the CdSxSe1−x alloy system and a calculation of the phase-matching angles for second harmonic generation for this system. Analytical expressions for the index and the birefringence of all x values are presented. The low-temperature photoluminescence spectrum has been measured and reveals a native defect at 1.45 eV and a peak at 1.8 eV caused by the vanadium dopant, as well as an exciton peak at 2.24 eV. The transmission spectrum displays three peaks due to the vanadium dopant at 0.979 eV, 1.087 eV, and 1.181 eV. The birefringence has been measured for x = 0.2 from 1 µm to 14 µm and varies from 0.0185 to 0.0125.

Details

ISSN :
1543186X and 03615235
Volume :
32
Database :
OpenAIRE
Journal :
Journal of Electronic Materials
Accession number :
edsair.doi...........ec3c34746f9117f8153b77b205db3576
Full Text :
https://doi.org/10.1007/s11664-003-0071-9