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TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor
- Source :
- IEEE Transactions on Electron Devices. 65:4807-4813
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. The two typical metrics, responsivity and noise equivalent power (NEP), are theoretically calculated for the optimization of the structure parameters. The optimized responsivity and NEP reach 5.8 kV/W and 50 pW/Hz0.5 at the same gate voltage, respectively, and a minimum NEP of 20 pW/Hz0.5 is obtained. The comparison between our simulation results and the experiment data of single-channel HEMT detector proves that the DC HEMT detector shows an excellent THz detection performance.
- Subjects :
- 010302 applied physics
Materials science
Terahertz radiation
business.industry
Detector
Transistor
Gallium nitride
02 engineering and technology
High-electron-mobility transistor
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Responsivity
chemistry
law
Logic gate
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Noise-equivalent power
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........ecac0bef8415c65184da92f499f9c7ee