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Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour
- Source :
- Solid-State Electronics. 134:74-81
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.
- Subjects :
- 010302 applied physics
Mobile channel
Ambipolar diffusion
business.industry
Chemistry
Charge current
Electrical engineering
Inverse
Inversion (meteorology)
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
Tunnel field-effect transistor
01 natural sciences
Electronic, Optical and Magnetic Materials
Computational physics
0103 physical sciences
Decay length
Materials Chemistry
Electrical and Electronic Engineering
0210 nano-technology
business
Quantum tunnelling
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 134
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........ed0b00a25a3dd329edf744a2825cc125