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Photovoltaic effects in BiFeO3

Authors :
Lothar A. Reichertz
Chan-Ho Yang
D. Paran
Jon F. Ihlefeld
Ramamoorthy Ramesh
Carolina Adamo
Byrnes Steven J
Janice L. Musfeldt
S. R. Basu
A. Melville
Joel W. Ager
Ying-Hao Chu
D. G. Schlom
Thomas E. Conry
Lane W. Martin
S. Y. Yang
Source :
Applied Physics Letters. 95:062909
Publication Year :
2009
Publisher :
AIP Publishing, 2009.

Abstract

We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8–0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface.

Details

ISSN :
10773118 and 00036951
Volume :
95
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........ed5b674e72a11c64b91565de36dd24de
Full Text :
https://doi.org/10.1063/1.3204695