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The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection
- Source :
- Microelectronics Reliability. :470-475
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- High voltage IGBT modules are used in high power applications including traction, industrial drives, grid systems and renewables such as in wind-power generation and conversion. Many of these applications are subject to harsh environmental conditions and in particular when the inverter cabinets do not shield the power electronics, including the IGBT modules, from such conditions. As an example, IGBT modules can be exposed to severe humidity levels. In this paper we investigate the influence of the combination of humidity and high voltage on the blocking reliability of 6.5 kV IGBT and diode devices. An improved testing approach High Voltage, High Humidity, High Temperature reverse biased (THBHV-DC) when compared to classical THB is applied to assess the robustness of different termination designs and passivation stacks. Full description of the failure mode and of its correlation to the humidity induced electrical field modifications is also provided. This analysis offers an insight on the design and testing aspects which are of key importance to the development of environmentally robust high power IGBTs.
- Subjects :
- 010302 applied physics
Passivation
Computer science
020208 electrical & electronic engineering
High voltage
02 engineering and technology
Insulated-gate bipolar transistor
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Automotive engineering
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Robustness (computer science)
Power electronics
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Inverter
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Failure mode and effects analysis
Diode
Subjects
Details
- ISSN :
- 00262714
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........edf6e96e4945e49035ef1addfc03f0c3