Cite
Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth
MLA
Itaru Kamiya, et al. “Real-Time Observation of Anisotropic Strain Relaxation by Three-Dimensional Reciprocal Space Mapping during InGaAs/GaAs (001) Growth.” Applied Physics Letters, vol. 97, July 2010, p. 041906. EBSCOhost, https://doi.org/10.1063/1.3458695.
APA
Itaru Kamiya, Akihisa Sai, Takuo Sasaki, Seiji Fujikawa, Masafumi Yamaguchi, Hidetoshi Suzuki, Yoshio Ohshita, & Masamitu Takahasi. (2010). Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth. Applied Physics Letters, 97, 041906. https://doi.org/10.1063/1.3458695
Chicago
Itaru Kamiya, Akihisa Sai, Takuo Sasaki, Seiji Fujikawa, Masafumi Yamaguchi, Hidetoshi Suzuki, Yoshio Ohshita, and Masamitu Takahasi. 2010. “Real-Time Observation of Anisotropic Strain Relaxation by Three-Dimensional Reciprocal Space Mapping during InGaAs/GaAs (001) Growth.” Applied Physics Letters 97 (July): 041906. doi:10.1063/1.3458695.