Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

MLA

J. Kwo, et al. “Impact of Metal/Oxide Interface on DC and RF Performance of D-Mode GaAs MOSFET Employing MBE Grown Ga/Sub 2/O/Sub 3/(Gd/Sub 2/O/Sub 3/) as Gate Dielectric.” International Conference on Molecular Bean Epitaxy, June 2003. EBSCOhost, https://doi.org/10.1109/mbe.2002.1037822.

APA

J. Kwo, B. Yang, Minghwei Hong, Joseph Petrus Mannaerts, M. Sergent, K.K. Ng, J. Bude, M.R. Frei, H.-J.L. Gossmann, & Peide D. Ye. (2003). Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric. International Conference on Molecular Bean Epitaxy. https://doi.org/10.1109/mbe.2002.1037822

Chicago

J. Kwo, B. Yang, Minghwei Hong, Joseph Petrus Mannaerts, M. Sergent, K.K. Ng, J. Bude, M.R. Frei, H.-J.L. Gossmann, and Peide D. Ye. 2003. “Impact of Metal/Oxide Interface on DC and RF Performance of D-Mode GaAs MOSFET Employing MBE Grown Ga/Sub 2/O/Sub 3/(Gd/Sub 2/O/Sub 3/) as Gate Dielectric.” International Conference on Molecular Bean Epitaxy, June. doi:10.1109/mbe.2002.1037822.