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Enhancement in Thermally Generated Spin Voltage at the Interfaces between Pd and NiFe2O4 Films Grown on Lattice-Matched Substrates
- Source :
- Physical Review Applied. 14
- Publication Year :
- 2020
- Publisher :
- American Physical Society (APS), 2020.
-
Abstract
- Efficient spin injection from epitaxial ferrimagnetic ${\mathrm{Ni}\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$ thin films into a $\mathrm{Pd}$ layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The ${\mathrm{Ni}\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$ films (60 nm to 1 $\ensuremath{\mu}$) are grown by pulsed-laser deposition on isostructural spinel ${\mathrm{Mg}\mathrm{Al}}_{2}{\mathrm{O}}_{4}$, ${\mathrm{Mg}\mathrm{Ga}}_{2}{\mathrm{O}}_{4}$, and ${\mathrm{Co}\mathrm{Ga}}_{2}{\mathrm{O}}_{4}$ substrates with lattice mismatch varying between 3.2 and 0.2%. For the thinner films ($\ensuremath{\le}330$ nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements. High-resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.
- Subjects :
- Materials science
Spintronics
Spinel
General Physics and Astronomy
02 engineering and technology
engineering.material
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Ferromagnetic resonance
Condensed Matter::Materials Science
Crystallography
Ferrimagnetism
Lattice (order)
0103 physical sciences
engineering
Condensed Matter::Strongly Correlated Electrons
Thin film
Isostructural
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 23317019
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied
- Accession number :
- edsair.doi...........eef8f93adc3d73b527ccf18b3fbacadb
- Full Text :
- https://doi.org/10.1103/physrevapplied.14.014014