Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C

Authors :: Feng Mei Wu
Y. Shi
Masashi Suezawa
Y.D. Zheng
Koji Sumino
Masato Imai
Source :: Materials Science Forum. :157-162
Publication Year :: 1995
Publisher :: Trans Tech Publications, Ltd., 1995.

Subjects :: Materials science
Silicon
business.industry
Infrared
Annealing (metallurgy)
Mechanical Engineering
Infrared spectroscopy
chemistry.chemical_element
Condensed Matter Physics
chemistry
Mechanics of Materials
Optoelectronics
General Materials Science
Irradiation
business

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