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Gas source MBE growth of TlInGaAs layers on GaAs substrates
- Source :
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 /spl mu/m wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl.
- Subjects :
- Materials science
Photoluminescence
Reflection high-energy electron diffraction
Condensed Matter::Other
business.industry
Physics::Optics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Semiconductor laser theory
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Optoelectronics
business
Lasing threshold
Indium gallium arsenide
Diode
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
- Accession number :
- edsair.doi...........ef9088f0e5e238a933ba04959f2f93cf
- Full Text :
- https://doi.org/10.1109/iciprm.2001.929129