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Mobility Extraction for Nanotube TFTs
- Source :
- IEEE Electron Device Letters. 32:913-915
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.
- Subjects :
- Nanotube
Electron mobility
Materials science
business.industry
Transistor
Hardware_PERFORMANCEANDRELIABILITY
Carbon nanotube
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Capacitance
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Semiconductor
law
Thin-film transistor
MOSFET
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........ef9420505b6b00df41ba3db39e67e876